Fabrication Of Vertical Ingaas Channel Metal-Insulator-Semiconductor Field Effect Transistor With A 15-Nm-Wide Mesa Structure And A Drain Current Density Of 7 Ma/Cm(2)

We proposed a vertical In GaAs channel metal-insulator-semiconductor field effect transistor (MISFET) with an ultranarrow mesa structure, an undoped channel, and a heterostructure launcher With the aim of obtaining a narrow mesa structure, we proposed the concept of performing selective undercut etching after dry etching We fabricated the proposed device with a 60-nm-long and 15-nm-wide channel mesa structure In the fabricated device, the observed drain current density was 1 1 A/mm Because the channel mesa width was 15 nm, the drain current density per unit area was 7 MA/cm(2) Thus, a high current density was achieved for an ultranarrow mesa structure (C) 2010 The Japan Society of Applied Physics