A 27% reduction in transceiver power for single-ended point-to-point DRAM interface with the termination resistance of 4×Z0 at both TX and RX
ISSCC(2013)
Abstract
The transceiver power is reduced by 27% in the single-ended point-to-point DRAM interface by increasing the termination resistance to 4×Z0 at both ends of TX and RX. The resultant increase of ISI and reflection is compensated for at RX by using the 1-tap and 2-tap integrating decision-feedback equalizer (IDFE), respectively, where the reflection tap position and the tap coefficients are found automatically during the training mode. This improves the bathtub opening of a 4-inch FR4 channel from 20% to 62.5% at 5Gb/s in 0.13μm CMOS.
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Key words
radio links,single ended point to point DRAM interface,bathtub opening,transceiver power,tap coefficients,size 4 in,DRAM chips,radio transceivers,termination resistance,decision feedback equalizer,size 0.13 mum,CMOS,reflection tap position
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