Systematic characterization of Cl/sub 2/ reactive ion etching for gate recessing in AlGaN/GaN HEMTs

High electron mobility transistors (HEMTs) with different gate recess depth were fabricated on an Al/sub 0.33/Ga/sub 0.67/N/GaN heterostructure, utilizing low power Cl/sub 2/ reactive ion etching. An increase in extrinsic transconductance and a positive threshold shift were observed with an increase of etching time. The etch depth was measured by atomic force microscopy (AFM) and determined to be ...