MOMBE: superior epitaxial growth for InP-based monolithically integrated photonic circuits
Journal of Crystal Growth(2000)
摘要
Basic developmental steps are outlined for the application of metal organic molecular beam epitaxy as an epitaxial fabrication process for InP-based integrated photonic circuits. Besides high-quality performance of the individual devices, implementation of Fe-doped semi-insulating layers and selective area deposition of GaInAsP for the whole composition range are of concern. Low-loss semi-insulating waveguides were fabricated for optically interconnecting and electrically isolating different devices at deposition conditions that have proven adequate for selective area growth and, simultaneously, for effective suppression of Fe-movement. Fabricated laser/waveguide butt-joints, a basic building block for any integrated photonic circuit, demonstrate the potential of metal organic molecular beam epitaxy to form practically ideal lateral growth interfaces without compromising on device performance.
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关键词
81.15.Hi,81.05.Ea,61.72.V,42.82.E
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