An Analytic Model to Account for Quantum–Mechanical Effects of MOSFETs Using a Parabolic Potential Well Approximation

An analytic model to account for the quantum-mechanical effects (QMEs) of the MOSFETs using a parabolic potential well approximation is presented in this paper. Based on the solution of the coupled Schroumldinger and Poisson equations following the Wentzel-Kramer-Brillouin method, a transcendental equation of the subband energy level has been rigorously derived to obtain an approximate analytic so...