Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer

Ping-Hung Tsai,Kuei-Shu Chang-Liao,Chu-Yung Liu,Tien-Ko Wang,P. J. Tzeng, C. H. Lin,L. S. Lee, M.-J. Tsai

Electron Device Letters, IEEE（2008）

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摘要

Operation properties of polysilicon-oxide-nitride-oxide-silicon-type Flash device with HfAlO charge-trapping layer having various Al contents were investigated in this letter. Satisfactory performance in terms of operation speed, retention, and program/erase endurance of the Flash device is achieved with the optimal Al content of 18%-28% in the HfAlO trapping layer. In addition, high-speed operation can be attained with the combination of channel-hot-electron-injection programming and band-to-band hot hole erasing for NOR architecture applications.

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关键词

sonos-type nonvolatile memory device,semiconductor doping,program/erase endurance,charge trapping,channel-hot-electron-injection programming,flash,polysilicon-oxide-nitride-oxide-silicon-type flash device,nor architecture,hot carriers,optimal aluminun doping,polysilicon–oxide–nitride–oxide–silicon (sonos)-type,nonvolatile memory,band-to-band hot hole erasing,charge-trapping layer,polymer blends,nor circuits,atomic layer deposition (ald),electron traps,charge injection,hfalo,flash memories,atomic layer deposition,electronics industry,industrial electronics,voltage,doping

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