Photoluminescence Properties Of Eu-Implanted Alxga1-Xn (0 <= X <= 1)

Photoluminescence properties of Eu-implanted AlGaN with whole Al content are investigated. Strong photoluminescence (PL) lines attributed to D-5(0) - T-7(j) transitions of Eu3+ are observed from Eu-doped AlGaN with whole Al content. The PL intensity becomes maximum around Al content of x=0.2. From the results of time-resolved PL, the decay time of Eu3+-related PL decreases with increasing Al content. The intensity enhanement effect of Eu3+-rerated luminescence by AlGaN is mainly due to the improvement of energy transfer efficiency rather than the improvement of transition probability of Eu3+ by changing the crystal field.