Indium tin oxide/(n+-p) silicon solar cell
Solar Cells（1985）
摘要
The solar cell structure consists of a shallow n+-p junction prepared on a p-type silicon substrate using phosphorus diffusion at a temperature of 800 °C.
更多查看译文
关键词
phosphorus,indium tin oxide
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要