Dislocation Reduction in Nitride-Based Schottky Diodes by Using Multiple Mgxny/Gan Nucleation Layers

K. H. Lee,P. C. Chang,S. J. Chang,Y. K. Su,Y. C. Wang,C. L. Yu,C. H. Kuo

THIN SOLID FILMS（2010）

引用 0|浏览11

关键词

Nitrides,Schottky diodes,MgxNy/GaN,Nucleation layers,Atomic Force Microscopy,Secondary-Ion Mass Spectroscopy,X-ray diffraction,Electrical properties and measurements

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