Silicon carbide-assisted co-existence of magnetic phases in well-optimized Ti3SiC2-etched MXene

Here, we report the first successful exfoliation of two-dimensional Ti(3)C(2)Tx MXene through selective etching of silicon from titanium silicon carbide (Ti3SiC2) MAX. The successful etching and exfoliation of MXene are confirmed through the shifting of all (00l) peaks to lower angles along with the increase in the c-lattice parameter as determined by X-ray diffraction to detail the material structure. The c-lattice parameter of multilayered MXene was found to be 19.34 A which was increased to 26.22 A after the delamination process indicating the successful intercalation of TMA+ ions within the MXene Sheets. The scanning electron microscopy (SEM) images show the formation of a 2D layered structure. The magnetic measurement of the etched MXene sample was measured using a superconducting quantum interference device (SQUID: Quantum Design). The magnetization versus magnetic (M - H) curves indicate the ferromagnetic-dominant hysteresis loops at low-temperature as well as at room temperature along with the presence of a small silicon carbide (SiC) diamagnetic phase. The presence of the SiC phase is confirmed through XRD and Raman spectra that show the vibrational modes of SiC within the 2D MXene structure. The present work shows the co-existence of ferromagnetic and diamagnetic phases, making it suitable for 2D material for future spintronics devices.