1.27 [micro sign]m metamorphic InGaAs quantum well lasers on GaAs substrates

I. Tångring,S. Wang,M. Sadeghi,A. Larsson

Electronics Letters（2006）

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摘要

Pulsed operation at a wavelength of 1.27 /spl mu/m from metamorphic ridge-waveguide (RWG) InGaAs quantum well lasers on GaAs substrates using an alloy graded buffer, grown by molecular beam epitaxy, is demonstrated. Laser performance is anisotropic along the two orthogonal directions with lower threshold currents along the direction. Post-growth rapid thermal annealing fur...

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关键词

quantum well lasers,waveguide lasers,ridge waveguides,semiconductor growth,molecular beam epitaxial growth,rapid thermal annealing,III-V semiconductors,indium compounds,gallium arsenide

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