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Effect Of Pressure On The Electrical Resistivity Of Cezn3p3

Akira Yamada,Naho Hara,Kazuyuki Matsubayashi,Koji Munakata,Chandryee Ganguli, Atsushi Ochiai,T Matsumoto,Yoshiya Uwatoko

INTERNATIONAL CONFERENCE ON HIGH PRESSURE SCIENCE AND TECHNOLOGY, JOINT AIRAPT-22 AND HPCJ-50（2010）

Cited 17|Views3
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Abstract
We have measured the electrical resistivity of CeZn3P3 single crystals under pressure up to 19 GPa for temperature down to 0.4 K. At ambient pressure, the electrical resistivity shows a semiconducting behavior with an energy gap E-g similar to 1800 K. We have found that the E-g monotonically decreases with increasing pressure, and possibly disappears at around 20 GPa.
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Key words
electrical resistivity,cezn<sub>3</sub>p<sub>3</sub>,pressure
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