Correlated use of characterization techniques to optimize the Mg implantation annealing for self-aligned HBT's

V AMARGER,C DUBONCHEVALLIER,A PAPADOPOULO,B DESCOUTS,Y GAO

APPLIED SURFACE SCIENCE（1991）

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Abstract

The annealing process of Mg-implanted GaAs/GaAlAs HBT's has been optimized using different analysis techniques. The Mg activation was deduced from a comparison between the atomic profile determined by SIMS and the electrical profile determined by electrochemical C-V profiling. Under the optimum annealing conditions, a record activation value of 87% was reached. Cathodoluminescence analysis has also been used to assess the quality of the implanted materials.

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Key words

mg implantation,hbt,annealing,self-aligned

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