半导体RSD开关预充电路设计与研究
Power Electronics(2007)
Abstract
利用快速晶闸管设计了一种可用于触发大电流半导体开关的反向导通型双晶复合晶体管(Reversely Switching Dynistor,简称RSD)电路。重点介绍了RSD预充电路参数选择和触发脉冲产生电路的设计,解决了预充电路和主回路RSD开关开通后各电气参数的配合问题。实验结果表明,当预充电路的工作电压约为800V时,RSD开关的预充峰值电流约为600A,脉冲宽度约为2μs,流过RSD开关的脉冲峰值电流可达5.3kA,脉冲宽度约为10μs。
MoreTranslated text
Key words
semiconductor,thyristor,trigger/reversely switching dynistor,switching
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined