Hydrostatic Pressure Effects On Exciton States In Inas/Gaas Quantum Dots
Superlattices and Microstructures(2008)
摘要
Based on the effective-mass approximation, the hydrostatic pressure effects on exciton states in InAs/GaAs self-assembled quantum dots (QDs) are studied by means of a variational method. Numerical results show that the exciton binding energy has a minimum with increasing dot height for any hydrostatic pressure. The interband emission energy increases when the hydrostatic pressure increases. In particular, we find that hydrostatic pressure has a remarkable effect on exciton states for small QD size. Our results are in agreement with experiment measurements. (c) 2007 Elsevier Ltd. All rights reserved.
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关键词
quantum dot,exciton,hydrostatic pressure
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