NON-LINEAR GAN-HEMT MODELING INCLUDING THERMAL EFFECTS

AlGaN/GaN high electron mobility transistors (HEMTs) show very promising properties for both high-power and high-temperature applications. Due to the high dissipated power level especially for the GaN-HEMTs grown on sapphire substrate the output characteristics reveal negative output conductance at high drain voltages. Application of the standard HEMT models does not reflect the real DC transistor behavior. For this reason self-heating effect is included into the well-established HEMT model developed in (1), (2) for the GaAs-based transistors.