A novel method for positioning of InAs islands on GaAs (110)
Physica E: Low-dimensional Systems and Nanostructures(2005)
摘要
A novel method for positioning of InAs islands on GaAs (110) by cleaved edge overgrowth is reported. The first growth sample contains strained InxGa1−xAs/GaAs superlattice (SL) of varying indium fraction, which acts as a strain nanopattern for the cleaved-edge overgrowth. Atoms incident on the cleaved edge will preferentially migrate to InGaAs regions where favorable bonding sites are available. By this method InAs island chains with lateral periodicity defined by the thickness of InGaAs and GaAs of SL have been realized by molecular beam epitaxy (MBE). They are observed by means of atomic force microscopy (AFM). The strain nanopattern's effect is studied by the different indium fraction of SL and MBE growth conditions.
更多查看译文
关键词
81.05.Ea,68.65.Cd,68.66.Hb
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要