Temperature dependence of luminescence from a silica glass under in-reactor irradiation

We have investigated in-reactor luminescence (IRL) from a silica glass at temperatures ranging from 100K to 250K. The IRL consists mainly of a broad emission band peaked at 2.7eV assigned to oxygen deficient centers produced in the silica glass under the in-reactor irradiation. The 2.7eV emission intensity linearly increased with the irradiation time and its increasing rate was larger for higher irradiation temperatures. However, this temperature dependence is inconsistent with that for the defect production rate and the cause is not clear at present. The initial intensity of the 2.7eV IRL band increases with temperature, showing an activation energy of ca 21meV. This value is much lower than those observed in the temperature dependence of the 2.7eV photoluminescence (PL) and the cathodeluminescence (CL) induced by 8keV electron irradiation. These results suggest that in IRL, some electrons excited to higher energy levels than the luminescence level are likely transferred to the luminescence state without thermal activation, resulting in a lower activation energy in their temperature dependence.