Defect characterization of electrically degraded ZnSe based laser diodes

The degradation of the optical active region of a CdSe/ZnSe based laser diode was analyzed in detail by use of transmission electron microscopy. The investigated structure contained a separate confinement structure in the active region and was degraded by operating the device below the lasing threshold. The defect formation is connected with a local relaxation of the quantum well and a Cd outdiffusion occurring along extended defects, which are confined to the quantum well. These defects are more pronounced into the p-type side of the laser diode. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.