一种全MOS低温漂电压基准源的研究
Microelectronics（2013）
Abstract
通过利用改进型低压Tracking-VGS结构的栅源电压差ΔVGS,对NMOS晶体管的阈值电压进行补偿,提出一种全MOS低温漂电压基准源结构,获得了电源抑制特性较好的低温漂基准电压。基于2.5V65nm标准CMOS工艺,对电路进行HSPICE仿真验证。结果显示:在-40℃～125℃温度范围内,基准电压为1.1V,温度系数为1.6×10-5/℃,电源抑制比为-51dB。
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Key words
Temperature compensation,Voltage reference source,NMOS gate-source voltage,Tracking-VGS
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