Effects On Channeling Of Radiation-Damage Due To 28 Gev Protons

S.I Baker,R.A Carrigan,V.R Cupps,J.S Forster,W.M Gibson,C.R Sun

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS（1994）

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摘要

For an irradiation of 2.9 x 10(19) protons at a beam energy of 28 GeV, the channeling minimum yield in a silicon single crystal increased from 2.3% to 4.1%. The radiation damage occurred with a proton fluence of (4.1 +/- 1.4) x 10(20)/cm2. The degradation was measured with MeV-range He ions using Rutherford backscattering. The relevance to bent crystal extraction of TeV beams is discussed.

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关键词

rutherford scattering,materials science,particle accelerators,crystals,particle acceleration,silicon,backscattering,radiation damage,single crystal

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