A Study of the Compositional Structure and Electrical Behaviour of Thin Silicon Oxynitride Layers Prepared by Rapid Thermal Processing

SiO(x)N(y) layers in the thickness range from 4 to 20 nm are grown by rapid thermal processing (RTP) using NH3 and N2O as nitridants. I-V measurements, investigation of the time-dependent breakdown, and post-stress C-V display significant distinctions between the layers according to their growth conditions. For the explanation of the electrical behaviour, the compositional structure was examined by means of AES, SIMS, and NRA.