Ion Fluence Dependence On Chemical Behavior Of Energetic Deuterium Implanted Into Oxygen-Contained Boron Film

Ion fluence dependence on chemical behavior of energetic deuterium implanted into oxygen-contained boron and pure boron films was investigated by XPS and TDS. It was found that large amount of D implanted into the oxygen-contained sample was quickly desorbed as D2O by chemical sputtering during D-2(+) implantation. The D retention for both samples increased as the D-2(+) fluence increased. The implanted D was preferentially trapped by O with forming O-D bond, and thereafter by B with forming B-D bond. These facts indicate that the stability of D bound to O is higher than that bound to B. It was concluded that the chemical sputtering of oxygen by energetic particles and the chemical stability of O-D bond should be taken into consideration for the evaluation of tritium inventory in the oxygen-contained boron film. (c) 2007 Elsevier B.V. All rights reserved.