A 7mb/s 64gb 3-Bit/cell DDR NAND Flash Memory in 20Nm-Node Technology
2011 IEEE International Solid-State Circuits Conference（2011）
关键词
NAND circuits,flash memories,semiconductor device reliability,DDR NAND flash memory,MP3 player,USB disk drive,asynchronous DDR interface,bit rate 200 Mbit/s,byte rate 7 MByte/s,cell-to-cell interference,digital still camera,memory card,size 20 nm,storage capacity 64 Gbit
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