Preparation of GaN nanorods through ammoniating Ga2O3/BN films deposited by magnetron sputtering

Large-scale GaN nanorods were synthesized on Si(111) substrate through ammoniating Ga2O3/BN films deposited by radio frequency magnetron sputtering technology. The structure, elemental composition, morphology and optical properties of the as-synthesized samples were characterized by X-ray diffraction (XRD), selected-area electron diffraction (SAED), fourier transformed infrared spectrum (FTIR), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and photoluminescence spectrum (PL). The results showed that the synthesized nanorods are hexagonal wurtzite GaN with diameters ranging from 150 to 400nm and lengths up to several tens of microns. photoluminescence spectra at room temperature showed a strong ultraviolet luminescence peak centered at 372nm and a blue luminescence peak centered at 420nm.