Key integration technologies for nanoscale FRAMs.
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control(2007)
Abstract
We discuss key technologies of 180-nm node ferroelectric memories, whose process integration is becoming extremely complex when device dimension shrinks into a nano scale. This is because process technology in ferroelectric integration does not extend to conventional shrink technology due to many difficulties of coping with metal-insulator-metal (MIM) capacitors. The key integration technologies in ferroelectric random access memory (FRAM) comprise: etching technology to have less plasma damage; stack technology for the preparation of robust ferroelectrics; capping technology to encapsulate cell capacitors; and vertical conjunction technology to connect cell capacitors to the plate line. What has been achieved from these novel approaches is not only to have a peak-to-peak value of 675 mV in bit-line potential but also to ensure a sensing margin of 300 mV in opposite-state retention, even after 1000 hour suffering at 150 degrees C.
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Key words
Random access memory,Ferroelectric films,Nonvolatile memory,Ferroelectric materials,MIM capacitors,Metal-insulator structures,Etching,Plasma applications,Plasma devices,Robustness
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