Effect of shroud flow on high quality InxGa1−xN deposition in a production scale multi-wafer-rotating-disc reactor

High quality InGaN thin films and InGaN/GaN double heterojunction (DH) structures have been epitaxially grown on c-sapphire substrates by MOCVD in a production scale multi-wafer-rotating-disc reactor between 770 to 840�C. We observed that shroud flow (majority carrier gas in the reaction chamber) is the key to obtaining high quality InGaN thin films. High purity H2 as the shroud flow results in poor crystal quality and surface morphology but strong photolumines-cence (PL) at room temperature. However, pure N2 as the shroud flow results in high crystal quality InGaN with an x-ray full width at half maximum (FWHM)InGaN(0002) of 7.5 min and a strong room temperature PL peaking at 400 nm. In addition, InGaN/GaN single heterojunction (SH) and DH structures both have excellent surface morphology and sharp interfaces. The full width at half maximum of PL at 300K from an InGaN/GaN DH structure is about 100 meV which is the best reported to date. A high indium mole fraction in InGaN of 60% and high quality zinc doped InGaN depositions were also achieved.