Radiation Hardening of MOS Transistors for Low Ionizing Dose Levels

The effect on MOS field-effect transistors of moderate doses of ionizing radiation (up to a few tens of kilorads) is a lateral shift in the Id-Vgs characteristic. Experimental results are given here to describe this shift, particularly for low ionizing doses, and from these results a model similar to others recently published is given to describe the mechanisms involved. The experiments are based ...