Delamination of Thin Layers in H⁺ Implanted Silicon Carbide

Delamination of thin SiC layers is studied in H+ implanted 6H-SiC. Hydrogen ions are implanted into 6H-SiC wafers at 100 keV with 1x10(17) and 2x10(17) ions/cm(2). The layers are annealed in N-2 at different temperatures ranging from 400 to 1050 degrees C. Delamination of thin layers is clearly observed by cross-sectional scanning electron microscopy (X-SEM) investigations. The thickness and refractive index of these layers subsequent to annealing are also determined by non-destructive multi-wavelength laser ellipsometry measurements. These measurements show the formation of double layers, a 619 nm thick Si layer and a 94 nm thick gap, after annealing at 800 degrees C. The thickness of these layers agrees well with those ones determined by X-SEM measurements. This non-destructive ellipsometric measurement is useful for the delamination study of SiC layers.