Calibration of boron concentration in CVD single crystal diamond combining ultralow energy secondary ions mass spectrometry and high resolution X-ray diffraction

In this work, we combine ultralow energy secondary ion mass spectrometry (uleSIMS) and high resolution X-ray diffraction (HRXRD) for the analysis of boron doped single crystal diamond. CVD layers of nominal boron concentrations 1.3·1021 At/cm3, 2.0·1021 At/cm3, 6.9·1021 At/cm3 and 3.8·1022 At/cm3 have been characterized by uleSIMS at 1 keV, 500 eV and 300 eV using normal incidence O2+ and by HRXRD.