Analytical modeling of electrical characteristics of coaxial nanowire FETs

In this paper, an analytical approach based on ballistic current transport is presented to investigate the electrical characteristics of the coaxial nanowire field effect transistor (CNWFET). The potential distribution along the nanowire is derived analytically by applying Laplace equation. In addition to application of WKB approximation and ballistic transport, tunneling process and quantum state of energy are implemented to determine the amount of electron transport along the nanowire from the source to the drain terminals. To consider the tunneling phenomena, WKB approximation is used and the transmission coefficients on both sides of the channel are obtained separately. In ballistic regime, an expression for channel current in terms of the bias voltages and Schottky barrier height (SBH) is derived. The results confirm a close correlation between the current equation of this work and the results presented via other approaches.