Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films

We report spectroscopic ellipsometry (SE) and low-temperature reflectance data on epitaxial GaN thin-film samples covering the widest range of tensile and compressive stress (-3.8 to 3.5 kbar) thus far. SE allows us to assess the preparation of smooth and abrupt GaN surfaces by chemical treatments in real time, and, coupled with the reflectance data. the Edn/dE contribution to dispersion, which is important for laser action. The reflectance data explicitly show the non-linear behavior of the B-A and C-A splittings vs. the energy of the A exciton. Lineshape ambiguities that hindered previous interpretations have been resolved with reciprocal space analysis, allowing us to obtain band parameters such as Delta(SO) = 17.0 +/- 1 meV and Delta(CF) = 9.8 +/- 1 meV with increased confidence. (C) 1998 Published by Elsevier Science S.A.