Effect of source composition on the vapor phase epitaxy of Cd1−xZnxTe large-area layers

Cadmium zinc telluride (Cd1−xZnxTe) epitaxial layers were grown by vapor phase epitaxy (VPE) to obtain material suitable for applications in photonics and radiation detectors. The VPE experiments were carried out in the modified Pfeiffer Classic 500 coating system, using Si 6-in substrates and Cd1−xZnxTe ternary sources grown by the Bridgman method.