Electron spectroscopy study of Si/Bi2Sr2CaCu2O8+x(001) interface formation

The process of interface formation during Si deposition onto the surface of singlecrystalline Bi2Sr2CaCu2O2+x has been investigated. Its reactive character manifesting in appearance of the complicated oxide phase SiSrO has been shown. It is formed as a result of displacing of Bi atoms from the upper crystal layer into the bulk by deposited Si atoms, their interaction with SrO layer and partial oxygen withdrawal from CuO2 layers. The pure Si phase grows on the intermediate oxide layer in form of islands. The process can be prevented by electron bombardment under low rates of silicon deposition. Electron irradiation of the formed structure with silicon film drives to electron-stimulated dissolution of Si layers in the substrate.