GaN-Based LEDs With an HT-AlN Nucleation Layer Prepared on Patterned Sapphire Substrate
Photonics Technology Letters, IEEE（2013）
Abstract
We report the growth and fabrication of GaN-based light-emitting diodes (LEDs) with a high-temperature (HT) AlN nucleation on patterned sapphire substrate. It was found that the undercut sidewalls were only formed for the HT-AlN LED through defect selective etching. At 1-A current injection, the output power of the LED with HT-AlN nucleation was 12% higher than that of an LED with a conventional low temperature GaN nucleation layer.
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Key words
high-temperature (HT)-AlN,high-temperature (ht)-aln,high-temperature nucleation,light-emitting diodes (leds),HT-AlN nucleation layer,wide band gap semiconductors,gan,light-emitting diodes (LEDs),patterned sapphire substrate (pss),GaN-AlN,undercut sidewalls,gallium compounds,III-V semiconductors,GaN-based LED,optical fabrication,nucleation,GaN,Al2O3,patterned sapphire substrate (PSS),1-A current injection,light-emitting diodes,defect selective etching,light emitting diodes,aluminium compounds,etching,patterned sapphire substrate,LED output power
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