New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy

GaNyAs1-x-yBix epilayers were grown on GaAs by molecular beam epitaxy for the first time. Multi layered samples consisting of GaAs1-xBix, GaNyAs1-y and GaNyAs1-x-yBix showed distinct X-ray diffraction (XRD) peaks ascribed to each layer. The GaBi molar fraction, x, estimated by the combination of Rutherford backscattering spectroscopy and XRD was controlled in a range up to 4.0%. The GaN molar fraction estimated from the angular spacing of the XRD peak between GaAs1-xBix and GaNyAs1-x-yBix increased up to 8.0% with increasing supply of activated nitrogen generated in rf plasma.