Study of the formation of InGaN quantum dots on GaN surface

V. V. Goncharov,M. N. Korytov,P. N. Brunkov,V. V. Lundin,E. E. Zavarin,A. F. Tsatsul’nikov,S. G. Konnikov

Bulletin of the Russian Academy of Sciences: Physics（2009）

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摘要

The effect of growth temperature on the surface morphology of InGaN layers with quantum dots (QDs) on GaN surface has been studied. The optimal conditions for formation of a dense uniform InGaN/GaN QD array with lateral sizes of 20–30 nm, which is characterized by long-wavelength photoluminescence in the range of 420–470 nm, are found.

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关键词

Atomic Force Microscope Image,Quantum Well,InGaN Layer,Atomic Force Microscope Analysis,InGaN Island

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