Charge-sensitive preamplifier IC for silicon calorimetry at colliders

Four versions of a fast monolithic charge-sensitive preamplifier (CSP) were designed using microwave BJT-JFET technology. The best one has a 3.5 ns rise time for input detector capacitance Cd = 100 pF and approximately 8 mW power dissipation for 5 V supply voltage. The ENC performance at shaping time 30 ns is 1350 e + 17 e/pF for Cd up to 600 pF. Crosstalk in a four-channel amplifier made in the same chip was measured to be about −46 dB for Cd = 100 pF. The linear output voltage swing is 0.8 V for voltage supply 5 V. The IC has revealed good radiation hardness to neutron irradiation.