Etching of deep V-groove channels on a (001) InP substrate and regrowth by gas source molecular beam epitaxy

We have investigated the regrowth of InP by gas source molecular beam epitaxy on patterned substrates with different V-grooved channels. The etching process has been adapted for deep V-grooves with narrow channels on (001) InP substrates. Three kinds of etch profiles which exhibit [lcub]111[rcub]B, [lcub]111[rcub]A and [lcub]112[rcub]A facets have been obtained. The regrown InP shows different planation effects depending on the facets of the V-groove. Planation effects are enhanced for B-type facets whereas the profile is left unchanged for A-type facets.