Characterizing Fluorine-Ion Implant Effects on Poly-Si Thin-Film Transistors With ${\hbox{Pr}}_{2}{\hbox{O}}_{3}$ Gate Dielectric

The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) with high-k Pr2O3 as gate dielectric is investigated for the first time. Using the Pr2O3 gate dielectric can obtain a high gate capacitance density and thin equivalent-oxide thickness, exhibiting a greatly enhancement in the driving capability of TFT device. Introducing fluorine ions into the ...