Effect Of Oxygen Supply On Movpe Inn

This paper reports the effect of oxygen supply on MOVPE InN growth at high temperature (similar to 650 degrees C). It is noted that the deterioration occurs near the interface, and InN film becomes porous layer during growth. When we supply oxygen in the reactor (O-2/NH3 ratio is 0 similar to 0.018 %), atomic hydrogen is reduced by reacting oxygen and the porous layer is decreased. Our study reveals that the porous layer is produced by atomic hydrogen. It is important to reduce the atomic hydrogen in the reactor. The oxygen suppresses the deterioration of the film during growth. The carrier concentration increases with the increase of oxygen supply. However, not only oxygen but also defect density due to oxygen is responsible for a higher carrier concentration. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim