6 W CW front-facet power from short-cavity (0.5 mm), 100 [micro sign]m stripe Al-free 0.98 [micro sign]m-emitting diode lasers

D. Botez,L. J. Mawst,A. Bhattacharya,J. Lopez, J. Li,T. F. Kuech,V. P. Iakovlev,G. I. Suruceanu,A. Caliman,A. V. Syrbu, J. Morris

Electronics Letters（1997）

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摘要

100 /spl mu/m stripe, 500 /spl mu/m long InGaAs/InGaP/GaAs facet-coated diode lasers of low series resistance R/sub s/ (0.09 /spl Omega/) emit up to 6W CW output power from their front facets. Comparison with previously published data indicates that for low R/sub s/ (/spl les/0.10 /spl Omega/) devices, the internal power density at catastrophic optical-mirror damage (P/sub COMD/) is independent of...

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Semiconductor lasers

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