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Cryogenic Operation of Silicon Detectors

P Collins,IBM Barnett,P Bartalini,W Bell,P Berglund,W de Boer,S Buontempo,K Borer,T Bowcock,J Buytaert,L Casagrande,V Chabaud,P Chochula,V Cindro,C Da Via,S Devine,H Dijkstra,B Dezillie,Z Dimcovski,O Dormond,V Eremin,A Esposito,R Frei,V Granata,E Grigoriev,F Hauler,S Heising,S Janos,L Jungermann,Z Li,C Lourenco,M Mikuz,TO Niinikoski,V O'Shea,VG Palmieri,S Paul,C Parkes,G Ruggiero,T Ruf,S Saladino,L Schmitt,K Smith,I Stavitski,E Verbitskaya,F Vitobello,M Zavrtanik

Nuclear instruments and methods in physics research Section A, Accelerators, spectrometers, detectors and associated equipment/Nuclear instruments & methods in physics research Section A, Accelerators, spectrometers, detectors and associated equipment（2000）

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Abstract
This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a fluence of 3.5×1014p/cm2 and of a p–n junction diode detector irradiated to a similar fluence. At temperatures below 130 K a recovery of charge collection efficiency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as changes in the effective space charge of the detector causing alterations in the depletion voltage.
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Key words
silicon detectors,radiation damage,position resolution
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