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Electron-beam-pumped heterostructure lasers

Yurii A Bykovskii,I G Goncharov,I T Rassokhin,A F Uzkii

Soviet Journal of Quantum Electronics（1974）

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Abstract
The threshold current of GaAs samples with waveguide structures and optimal doping was reduced compared with the threshold current of homogeneously doped lasers. The threshold was reduced to 0.15–0.2 A/cm2 for electrons of 30–50 keV energy and the external differential quantum efficiency was increased.
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Key words
quantum efficiency,electron beam
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