Electron-beam-pumped heterostructure lasers
Soviet Journal of Quantum Electronics(1974)
Abstract
The threshold current of GaAs samples with waveguide structures and optimal doping was reduced compared with the threshold current of homogeneously doped lasers. The threshold was reduced to 0.15–0.2 A/cm2 for electrons of 30–50 keV energy and the external differential quantum efficiency was increased.
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Key words
quantum efficiency,electron beam
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