The Fatigue Properties in Bi 4 Ti 3 O 12 -SrBi 4 Ti 4 O 15 Thin Film with La-Doped

Intergrowth Bi 4 Ti 3 O 12 -SrBi 4 Ti 4 O 15 (BT-SBTi) thin film was fabricated on Pt/TiO 2 /SiO 2 /Si(110) substrates by pulsed laser deposition technique. P r = 12 w C/cm 2 was obtained in the film annealed at 650 C by RTP. The measurement of fatigue behavior shows bad fatigue property. After La-doped, the Bi 3.25 La 0.75 Ti 3 O 12 -SrBi 4 Ti 4 O 15 (BLT-SBTi, P r = 13.5 w C/cm 2 at 250 nm) did not show any significant fatigue up to 10 10 switching cycles above applied field of 250 KV/cm. And also it has good retention properties. The field dependence of fatigue behavior and La-doped effect are discussed.