Source and Drain Series Resistance Reduction for N-Channel Transistors Using Solid Antimony (Sb) Segregation (SSbS) During Silicidation
IEEE Electron Device Letters(2008)
摘要
We report the first integration of a novel solid antimony (Sb) segregation (SSbS) process in a transistor fabrication flow. A thin solid Sb layer, which acts as a large source of n-type dopants, was deposited beneath a metallic nickel layer prior to source-drain silicidation. Following nickel silicidation, a very high concentration of Sb was incorporated at the NiSi/Si interface. The SSbS process ...
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关键词
Solids,Amplitude modulation,Silicidation,Nickel,Fabrication,Schottky barriers,FETs,Degradation,Leakage current,Voltage
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