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Dielectric Microcavity in GaN/Si

J.-Y. Duboz,L. Dua,G. Glastre,P. Legagneux,J. Massies,F. Semond,N. Grandjean

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH（2001）

Cited 13|Views8
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Abstract
We have demonstrated an original approach for fabricating microcavities in GaN grown on Si. Holes are etched in the Si substrate and highly reflective dielectric mirrors are deposited on both front and back sides. The cavity has been optically characterized and the results validate our approach.
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semiconductor
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