Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots

A. G. Gladyshev,N. V. Kryzhanovskaya,A. M. Nadtochy,E. S. Semenova,A. E. Zhukov,A. P. Vasil'ev,V. S. Mikhrin,Yu. G. Musikhin,M. V. Maximov,N. N. Ledentsov,V. M. Ustinov

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE（2006）

引用 1|浏览15

暂无评分

摘要

Optical properties of self-organized QDs grown on thick metamorphic InGaAs layers with different In composition are studied. The dots are formed by an overgrowth of original InAs islands with thin InGaAs or InAlAs layers. Room temperature photoluminescence at 1.55 mu m is demonstrated for the sample with 27% In composition in the matrix. The overgrowth with InAlAs layers permits to eliminate the wetting layer states and increase energy separation between QD ground and excited states. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

查看译文

关键词

room temperature,quantum dot,excited states,self organization

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要