Microwave dielectric properties of SiC(B) solid solution powder prepared by sol–gel

B-doped SiC powders were synthesized at different temperatures by sol-gel. Results show that C-enriched beta-SiC is generated completely when the temperature is 1700 degrees C and SiC(B) solid solution is generated when the temperature is 1800 degrees C. The electric permittivities of Sic samples were determined in the frequency range of 8.2-12.4 GHz. Results show that the SiC(B) sample has higher values in real part epsilon' and imaginary part epsilon " of permittivity. The mechanism of dielectric loss by doping has been discussed. (C) 2008 Elsevier B.V. All rights reserved.