Effects of dopants Ni and Zn on Hall resistivities and on newly found transverse resistivity components in YBa2Cu3O7−δ films

We have studied the effect of dopants Ni and Zn in YBa2Cu3O7−δ films on their transport properties, in particular the sign reversal of the Hall resistivity and the transverse voltage component α newly found in the present work. The dopant Zn has been surprisingly effective to suppress both properties while Ni has not. A physical interpretation on these observations is given with the aid of recent scanning tunneling microscope studies on the effect of the same dopants in Bi2Sr2CaCu2O8+δ.